TM XPT 600V IGBT V = 600V IXXH75N60B3D1 CES TM GenX3 w/ Diode I = 75A C110 V 1.85V CE(sat) t = 125ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 160 A C25 C G = Gate C = Collector I T = 110C 75 A C110 C E = Emitter Tab = Collector I T = 110C 30 A F110 C I T = 25C, 1ms 300 A CM C I T = 25C 30 A A C E T = 25C 500 mJ AS C Features SSOA V = 15V, T = 150C, R = 5 I = 150 A GE VJ G CM (RBSOA) Clamped Inductive Load V V z CE CES Optimized for 5-30kHz Switching z t V = 15V, V = 360V, T = 150C 10 s Square RBSOA sc GE CE J z Anti-Parallel Ultra Fast Diode (SCSOA) R = 22, Non Repetitive G z Avalanche Capability P T = 25C 750 W C C z Short Circuit Capability z T -55 ... +175 C International Standard Package J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L z T 1.6 mm (0.062in.) from Case for 10s 260 C High Power Density SOLD z 175C Rated M Mounting Torque 1.13/10 Nm/lb.in. d z Extremely Rugged Weight 6g z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values z Power Inverters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z UPS BV I = 250A, V = 0V 600 V z CES C GE Motor Drives z V I = 250A, V = V 3.0 5.5 V SMPS GE(th) C CE GE z PFC Circuits I V = V , V = 0V 25 A CES CE CES GE z Battery Chargers T = 150C 3 mA J z Welding Machines z I V = 0V, V = 20V 100 nA Lamp Ballasts GES CE GE V I = 60A, V = 15V, Note 1 1.60 1.85 V CE(sat) C GE T = 150C 2.00 V J 2013 IXYS CORPORATION, All Rights Reserved DS100328B(01/13)IXXH75N60B3D1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 20 32 S fs C CE C 3290 pF ies C V = 25V, V = 0V, f = 1MHz 195 pF P oes CE GE 1 2 3 C 63 pF res Q 107 nC g(on) Q I = 75A, V = 15V, V = 0.5 V 30 nC ge C GE CE CES Q 48 nC gc t 35 ns e d(on) t 75 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 1.7 mJ I = 60A, V = 15V on C GE Dim. Millimeter Inches t 118 160 ns V = 400V, R = 5 d(off) CE G Min. Max. Min. Max. t 125 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.5 2.1 mJ 1 f of A 2.2 2.6 .059 .098 2 t 36 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 72 ns J ri b 2.87 3.12 .113 .123 2 I = 60A, V = 15V E 2.6 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 400V, R = 5 t 145 ns CE G d(off) E 15.75 16.26 .610 .640 t 170 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 2.2 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.20 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.7 V F F GE T = 150C 1.6 V J I TI = 30A, V = 0V, -di /dt = 100A/s, = 100C 4 A RM F GE F J t T = 100C 100 ns V = 100V rr J R 25 ns I = 1A, V = 0V, -di /dt = 100A/s, V = 30V F GE F R R 0.9 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537