TM 1200V XPT V = 1200V IXYT55N120A4HV CES TM GenX4 IGBT I = 55A C110 V 1.8V CE(sat) t = 270ns fi(typ) Ultra Low-Vsat PT IGBT for up to 5kHz Switching TO-268HV (IXYT..HV) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 175C 1200 V CES J G = Gate C = Collector V T = 25C to 175C, R = 1M 1200 V CGR J GE E = Emitter Tab = Collector V Continuous 20 V GES V Transient 30 V GEM I T = 25C 175 A C25 C I T = 110C 55 A C110 C I T = 25C, 1ms 350 A CM C SSOA V = 15V, T = 125C, R = 5 I = 110 A Features GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES Optimized for Low Conduction Losses P T = 25C 650 W C C Positive Thermal Coefficient of Vce(sat) T -55 ... +175 C J International Standard Package T 175 C JM T -55 ... +175 C stg Advantages T Plastic Body for 10s 260 C SOLD Weight 4 g High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 1200 V PFC Circuits CES C GE Battery Chargers V I = 250 A, V = V 4.0 6.5 V GE(th) C CE GE Welding Machines I V = V , V = 0V 5 A CES CE CES GE Lamp Ballasts T = 150 C 2.5 mA J Inrush Current Protector Circuits I V = 0V, V = 20V 100 nA GES CE GE V I = 55A, V = 15V, Note 1 1.5 1.8 V CE(sat) C GE T = 150 C 1.8 V J 2020 Littelfuse, Inc. DS101000A(4/20)IXYT55N120A4HV Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 22 36 S fs C CE C 2150 pF ies C V = 25V, V = 0V, f = 1MHz 125 pF oes CE GE C 80 pF res Q 110 nC g(on) Q I = 55A, V = 15V, V = 0.5 V 17 nC ge C GE CE CES Q 56 nC gc t 23 ns d(on) t 35 ns Inductive load, T = 25C ri J E 2.3 mJ I = 40A, V = 15V on C GE t 300 ns V = 0.5 V , R = 5 d(off) CE CES G t 270 ns fi Note 2 E 5.3 mJ off t 21 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 40A, V = 15V E 3.8 mJ C GE on V = 0.5 V , R = 5 t 380 ns CE CES G d(off) t 530 ns Note 2 fi E 8.8 mJ off R 0.23 C/W thJC Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537