Preliminary Technical Information High Voltage V = 1700V IXYK30N170CV1 CES TM XPT IGBT I = 30A IXYX30N170CV1 C110 w/ Diode V 4.0V CE(sat) t = 95ns fi(typ) TO-264 (IXYK) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1700 V CES J G V T = 25C to 175C, R = 1M 1700 V CGR J GE C Tab V Continuous 20 V GES E V Transient 30 V GEM PLUS247 (IXYX) I T = 25C 100 A C25 C I T = 110C 30 A C110 C I T = 110C 38 A F110 C I T = 25C, 1ms 250 A CM C SSOA V = 15V, T = 150C, R = 2.7 I = 120 A G GE VJ G CM C (RBSOA) Clamped Inductive Load 1360 V Tab E P T = 25C 937 W C C G = Gate D = Collector T -55 ... +175 C J S = Emitter Tab = Collector T 175 C JM T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d International Standard Packages F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C High Voltage Package Weight TO-264 10 g High Blocking Voltage PLUS247 6 g Low Saturation Voltage Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Low Gate Drive Requirement High Power Density BV I = 250 A, V = 0V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V , V = 0V 25 A CES CE CES GE Applications T = 125C 4 mA J I V = 0V, V = 20V 100 nA Switch-Mode and Resonant-Mode GES CE GE Power Supplies V I = 30A, V = 15V, Note 1 3.5 4.0 V CE(sat) C GE Uninterruptible Power Supplies (UPS) T = 150C 4.6 V J Laser Generators Capacitor Discharge Circuits AC Switches 2017 IXYS CORPORATION, All Rights Reserved DS100724B(3/17)IXYK30N170CV1 IXYX30N170CV1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E A Q g I = 30A, V = 10V, Note 1 17 28 S S fs C CE R Q1 R Gate Input Resistance 2.8 D Gi R1 C 3100 pF 1 2 3 L1 ies C V = 25V, V = 0V, f = 1MHz 210 pF oes CE GE L C 55 pF res c Q 150 nC b A1 b1 g(on) b2 e x2 Q I = 30A, V = 15V, V = 0.5 V 15 nC ge C GE CE CES Q 65 nC 0P gc 4 Terminals: 1 = Gate 2,4 = Colector t 16 ns 3 = Emitter d(on) Inductive load, T = 25C J t 33 ns ri = 30A, V = 15V I C GE E 3.6 mJ on V = 0.5 V , R = 2.7 t CE CES G 143 ns d(off) Note 2 t 95 ns fi E 1.8 mJ off t 16 ns d(on) Inductive load, T = 150C J t 33 ns ri I = 30A, V = 15V E C GE 5.5 mJ on V = 0.5 V , R = 2.7 CE CES G t 193 ns d(off) Note 2 t 134 ns fi E 3.5 mJ off R 0.16 C/W thJC R 0.15 C/W TM thCS PLUS 247 Outline A E E1 A2 Q D2 R Reverse Diode (FRED) D1 D 4 (T = 25C, Unless Otherwise Specified) Characteristic Value 1 2 3 J L1 Symbol Test Conditions Min. Typ. Max. V 3.5 V L F I = 30A,V = 0V, Note 1 F GE T = 150C 3.7 V J b I 32 A A1 e RM I = 30A,V = 0V, -di /dt = 500A/ s, 3 PLCS C b2 2 PLCS 2 PLCS F GE F b4 V = 1200V, T = 150C t 175 ns Terminals: 1 - Gate R J rr 2,4 - Collector 3 - Emitter R 0.36C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537