IXZ308N120 Z-MOS RF Power MOSFET N-Channel EnhanceN-Channel Enhancemment Ment Mode Lineode Switch Mode RF Mar 175MHz RF OMSFETOSFET LowLo Capacitance Z-MOS Capacitance Z-MOS M MOOSFETSFET Process Process TMTM V = 1200 V DSS Optimized for RF Operation Optimized for Linear Operation Ideal for Class C, D,Ideal for Class AB & C, Broadcas & E Applications t & Communications Applications I = 8.0 A D25 R = Symbol Test Conditions Maximum Rat- 2.1 DS(on) ings P = 880 W DC T = 25C to 150C J V 1200 V DSS T = 25C to 150C R = 1 M V J GS 1200 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c 8 A I D25 T = 25C, pulse width limited by T c JM 40 A I DM T = 25C c 8 A I AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns DRAIN 880 W P DC GATE T = 25C, Derate 4.4W/C above 25C c P 440 W DHS T = 25C c 3.0 W P DAMB 0.17 C/W R thJC SG1 SG2 SD1 SD2 R 0.34 C/W thJHS Features Isolated Substrate high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 4 ma GS D V 1200 V DSS cycling capability V = V , I = 250 V DS GS D 3.5 6.5 V IXYS advanced Z-MOS process GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8V T = 25C DS DSS J 50 faster switching I A DSS V =0 T =125C GS J 1 mA Low R DS(on) Very low insertion inductance (<2nH) V = 20 V, I = 0.5I GS D D25 R 2.1 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 50 V, I = 0.5I , pulse test DS D D25 10.1 S g fs Advantages T -55 +175 C J Optimized for RF and high speed Easy to mountno insulators needed T 175 C JM High power density -55 + 175 C T stg 1.6mm(0.063 in) from case for 10 s 300 C T L Weight 3.5 g IXZ308N120 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. 1 R G 1960 pF C iss V = 0 V, V = 0.8 V , GS DS DSS(max) 59 pF C oss f = 1 MHz 9.2 pF C rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS 5 ns T on I = 0.5 I D DM R = 1 (External) T 4 ns d(off) G T 6 ns off Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS 8 I S Repetitive pulse width limited by I 48 A SM T JM I I V =0 V, Pulse test, t F= s, GS V 1.5 V SD 300s, duty cycle 2% T TBD ns rr IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002