Product Information

JSM2302A-A29T

JSM2302A-A29T electronic component of JSMSEMI

Datasheet
SOT-23-3 MOSFETs ROHS

Manufacturer: JSMSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0295 ea
Line Total: USD 0.59

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20
20 : USD 0.0287
200 : USD 0.0231
600 : USD 0.02
3000 : USD 0.0163
9000 : USD 0.0147
21000 : USD 0.0137

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The JSM2302A-A29T is a SOT-23-3 MOSFET manufactured by JSMSEMI. The device is RoHS compliant and is designed with a low on-resistance for high efficiency, low power consumption, and excellent switching performance. It features built-in protection circuitry which provides protection against voltage events that could cause a short circuit or breakdown. It is comprised of a source-to-drain-connected three-pin SOT-23 package and a gate driven P-channel MOSFET optimized for low on-resistance. It has a wide range of applications including automotive, power management, telecom, solar and motor drive applications.It features low on-resistance of 0.012 ohms with an input voltage range of 4.5V to 12V and an output current maximum of 360mA. It has excellent thermal characteristics with a junction-to-ambient thermal resistance value of 0.9°C/W. The device is rated for operation from -40 to +100°C. It also has an ESD rating of > 2kV.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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