APT200GN60B2G 600V, V = 1.45V Typical CE(ON) Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and CE(ON) are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coef cient. A CE(ON) built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simpli es gate drive design and minimizes losses. 1200V Field Stop Trench Gate: Low V CE(ON) Easy Paralleling Integrated Gate Resistor :Low EMI, High Reliability RoHS Compliant Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS Maximum Ratings All Ratings: T = 25C unless otherwise speci ed. C Parameter Ratings Unit Symbol V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 20 GE I Continuous Collector Current T = 25C 283 C1 C I Continuous Collector Current T = 110C 158 Amps C2 C 1 I Pulsed Collector Current 600 CM SSOA Switching Safe Operating Area T = 175C 600A 600V J P Total Power Dissipation 682 Watts D T , T Operating and Storage Junction Temperature Range -55 to 175 J STG C Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 T L Static Electrical Characteristics Characteristic / Test Conditions Min Typ Max Unit Symbol V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 - - (BR)CES GE C 5.0 5.8 6.5 V Gate Threshold Voltage (V = V , I = 3.2mA, T = 25C) GE(TH) CE GE C j Volts 1.05 1.45 1.85 Collector Emitter On Voltage (V = 15V, I = 200A, T = 25C) GE C j V CE(ON) - 1.65 - Collector Emitter On Voltage (V = 15V, I = 200A, T = 125C) GE C j 2 -- 25 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) CE GE j I A CES 2 - - 1000 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) CE GE j - - 600 I Gate-Emitter Leakage Current (V = 20V) nA GES GE - R Integrated Gate Resistor - 2 G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics APT200GN60B2G Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance - 14100 - ies V = 0V, V = 25V GE CE C Output Capacitance - 461 - pF oes f = 1MHz C Reverse Transfer Capacitance - 393 - res V Gate-to-Emitter Plateau Voltage - 8.2 - V GEP Gate Charge Q Total Gate Charge - 1180 - V = 15V g GE V = 300V Q Gate-Emitter Charge -85 - nC ge CE I = 100A Q Gate-Collector Charge C - 660 - gc 7 T = 150C, R = 1.0 , V = 15V, J G GE SSOA Switching Safe Operating Area 600 A L = 100 H, V = 600V CE t Turn-On Delay Time -50 - d(on) t Current Rise Time Inductive Switching (25C) -80 - r ns V = 400V t Turn-Off Delay Time CC - 560 - d(off) V = 15V GE t Current Fall Time - 100 - f I = 200A C 4 E Turn-On Switching Energy -13 - on1 R = 1.0 G 5 E Turn-On Switching Energy -15 - mJ T = +25C on2 J 6 E Turn-Off Switching Energy -11 - off t Turn-On Delay Time -50 - d(on) t Current Rise Time -80 - r Inductive Switching (125C) ns t Turn-Off Delay Time - 620 - V = 400V d(off) CC t Current Fall Time V = 15V -70 - GE f 4 I = 200A E C Turn-On Switching Energy -14 - on1 R = 1.0 5 G E Turn-On Switching Energy -16 - mJ on2 T = +125C J 6 E Turn-Off Switching Energy -10 - off Thermal and Mechanical Characteristics Characteristic / Test Conditions Min Typ Max Unit Symbol Junction to Case (IGBT) - - 0.13 C/W R JC Junction to Case (DIODE) - - N/A R JC Package Weight - 6.1 - gm W T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to on1 the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance not including gate driver impedance. G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-7628 Rev A 9-2008