NTE3320 Insulated Gate Bipolar Transistor NChannel Enhancement Mode, High Speed Switch TO3P Type Package Features: Fourth Generation IGBT Enhancement Mode Type High Speed Low Switching Loss Low Saturation Voltage Applications: High Power Switching Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A CollectorEmitter Voltage, V ..................................................... 600V CES GateEmitter Voltage, V ........................................................ 20V GES Collector Current, I C DC ......................................................................... 50A Pulse (1ms) ................................................................ 100A Collector Power Dissipation (T = +25 C), P ........................................ 240W C C Operating Junction Temperature, T .............................................. +150 C J Storage Temperature Range, T ......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R ................................. 0.521 C/W th(jc) Screw Torque .................................................................. 0.8N m Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I nA V = 20V, V = 0 500 GES GE CE Collector Cutoff Current I V = 600V, V = 0 1.0 mA CES CE GE GateEmitter Cutoff Voltage V I = 5 mA, V = 5V 3.5 6.5 V GE(off) C CE CollectorEmitter Saturation Voltage V I = 50A, V = 15V 2.0 2.45 V CE(sat) C GE Input Capacitance C V = 10V, V = 0, f = 1MHz 7900 pF ies CE GE TurnOn Delay Time t Inductive Load 0.09 s d (on) Rise Time t 0.07 s r V = 300V, I = 50 A, CC C V = 15V, R = 13 TurnOn Time t 0.24 s GG G on TurnOff Delay Time t 0.30 s d (off) Fall Time t 0.05 s f TurnOff Time t 0.43 s off TurnOn Switching Loss E 1.30 mJ on TurnOff Switching Loss E 1.34 mJ off Rev. 814C G E .810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) GC E Note: Collector connected to heat sink.