TYPICAL PERFORMANCE CURVES APT33GF120B2 LRDQ2(G) 1200V APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT & FRED T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through (L) technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. Low Forward Voltage Drop High Freq. Switching to 20KHz RBSOA and SCSOA Rated Ultra Low Leakage Current C Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter APT33GF120B2 LRDQ2(G) UNIT V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 64 C1 C I Continuous Collector Current T = 100C 30 Amps C2 C 1 I Pulsed Collector Current 75 CM Switching Safe Operating Area T = 150C SSOA 75A 1200V J P Total Power Dissipation Watts 357 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 1.5mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) 4.5 5.5 6.5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 25A, T = 25C) 2.0 2.5 3.0 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 25A, T = 125C) xx GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 100 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 6000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 120 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT33GF120B2 LRDQ2(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 1855 ies C pF Output Capacitance V = 0V, V = 25V 230 oes GE CE C f = 1 MHz Reverse Transfer Capacitance res 110 V V Gate-to-Emitter Plateau Voltage Gate Charge 10 GEP 3 Q V = 15V Total Gate Charge 170 g GE V = 600V Q nC Gate-Emitter Charge CE 19 ge I = 25A Q C Gate-Collector Mille) Charge 100 gc T = 150C, R = 4.3, V = J G GE Switching Safe Operating Area SSOA 75 A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) Turn-on Delay Time 14 d(on) V = 800V t Current Rise Time 17 CC r ns t V = 15V Turn-off Delay Time 185 d(off) GE I = 25A t C Current Fall Time 110 f R = 4.3 4 G E Turn-on Switching Energy 1315 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 1930 on2 6 E Turn-off Switching Energy 1515 off t Inductive Switching (125C) Turn-on Delay Time 14 d(on) t V = 800V Current Rise Time 17 r CC ns V = 15V t Turn-off Delay Time GE 220 d(off) I = 25A t C Current Fall Time 135 f R = 4.3 4 4 G E 1325 Turn-on Switching Energy on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 3325 on2 6 E Turn-off Switching Energy 2145 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .35 JC C/W R Junction to Case (DIODE) 0.61 JC W Package Weight gm 6.10 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 052-6280 Rev A 11-2005