TO-247 APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E is achieved off through leading technology silicon design and lifetime control processes. A reduced E - off 3 D PAK V tradeoff results in superior ef ciency compared to other IGBT technologies. Low CE(ON) gate charge and a greatly reduced ratio of C /C provide excellent noise immunity, short res ies delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT35GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Very Low E for maximum ef ciency Half bridge off Ultra low C for improved noise immunity High power PFC boost res Low conduction loss Welding Low gate charge UPS, solar, and other inverters Increased intrinsic gate resistance for low EMI High frequency, high ef ciency industrial RoHS compliant Absolute Maximum Ratings Symbol Parameter Ratings Unit Collector Emitter Voltage 900 V V ces I Continuous Collector Current T = 25C 63 C1 C A I Continuous Collector Current T = 100C 35 C2 C 1 I Pulsed Collector Current 105 CM 2 V Gate-Emitter Voltage 30 V GE P Total Power Dissipation T = 25C 290 W D C SSOA Switching Safe Operating Area T = 150C 105A 900V J T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for Soldering: 0.063 from Case for 10 Seconds 300 J Static Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit V Collector-Emitter Breakdown Voltage V = 0V, I = 1.0mA 900 BR(CES) GE C V = 15V, T = 25C 2.5 3.1 J GE V V Collector-Emitter On Voltage CE(on) I = 18A T = 125C 2.2 C J V Gate Emitter Threshold Voltage V =V , I = 1mA 3 4.5 6 GE(th) GE CE C T = 25C 250 V = 900V, CE J I Zero Gate Voltage Collector Current A CES V = 0V T = 125C 1000 GE J I Gate-Emitter Leakage Current V = 30V 100 nA GES GS Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance - - 0.43 C/W JC W Package Weight - 5.9 - g T Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 inlbf Microsemi Website - APT35GA90B S Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 1934 ies C Output Capacitance 173 V = 0V, V = 25V pF oes GE CE C Reverse Transfer Capacitance 28 f = 1MHz res 3 Q Total Gate Charge Gate Charge 84 g Q Gate-Emitter Charge V = 15V 14 ge GE nC V = 450V CE Q Gate- Collector Charge 34 gc I = 18A C 4 T = 150C, R = 10 , V = 15V, J G GE SSOA Switching Safe Operating Area 105 A L= 100uH, V = 900V CE t Turn-On Delay Time Inductive Switching (25C) 12 d(on) t Current Rise Time V = 600V 15 r CC ns t Turn-Off Delay Time V = 15V 104 d(off) GE t Current Fall Time I = 18A 86 f C 4 E Turn-On Switching Energy 642 R = 10 on2 G J 6 382 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 11 d(on t Current Rise Time V = 600V 14 r CC ns t Turn-Off Delay Time V = 15V 154 d(off) GE t Current Fall Time 144 I = 18A f C 4 E Turn-On Switching Energy 1044 R = 10 on2 G J 6 E Turn-Off Switching Energy 907 T = +125C off J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6332 Rev D 5 - 2011