TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA Rated C Low Gate Charge G Ultrafast Tail Current shutoff E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Parameter UNIT Symbol APT40GP90B V Collector-Emitter Voltage 900 CES V Gate-Emitter Voltage 20 Volts GE V Gate-Emitter Voltage Transient 30 GEM 7 I 100 Continuous Collector Current T = 25C C1 C I Amps Continuous Collector Current T = 110C 50 C2 C 1 I Pulsed Collector Current T = 150C 160 CM C SSOA Switching Safe Operating Area T = 150C 160A 900V J P Watts Total Power Dissipation 543 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Collector-Emitter Breakdown Voltage (V = 0V, I = 250A) 900 CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 40A, T = 25C) 3.2 3.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 40A, T = 125C) 2.7 GE C j 2 Collector Cut-off Current (V = V , V = 0V, T = 25C) 250 CE CES GE j A I CES 2 Collector Cut-off Current (V = V , V = 0V, T = 125C) 1000 CE CES GE j Gate-Emitter Leakage Current (V = 20V) I nA 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT40GP90B DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 3300 Capacitance ies C Output Capacitance V = 0V, V = 25V 325 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 35 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 145 g V = 450V Q nC Gate-Emitter Charge CE 22 ge I = 40A C Q Gate-Collector Mille) Charge gc 55 SSOA Switching Safe Operating Area T = 150C, R = 5, V = 160 A J G GE 15V, L = 100H,V = 900V CE t 16 Turn-on Delay Time Inductive Switching (25C) d(on) V = 600V CC t Current Rise Time 27 r ns V = 15V GE t Turn-off Delay Time 75 d(off) I = 40A C t 60 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy TBD on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 1415 J on2 6 E Turn-off Switching Energy 825 off t Turn-on Delay Time Inductive Switching (125C) 16 d(on) V = 600V t CC Current Rise Time 27 r ns V = 15V GE t Turn-off Delay Time 110 d(off) I = 40A C t Current Fall Time 105 f R = 5 G 4 4 E Turn-on Switching Energy TBD on1 T = +125C J 55 E Turn-on Switching Energy (Diode) 2370 on2 J 66 E Turn-off Switching Energy 1505 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R .23 Junction to Case (IGBT) JC C/W R Junction to Case (DIODE) N/A JC W Package Weight 5.90 gm T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7479 Rev A 5-2004