APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, t 280ns rr N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT56F50B2 APT56F50L intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching Single die FREDFET at very high frequency. FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 56 C I D Continuous Drain Current T = 100C 35 A C 1 I Pulsed Drain Current 175 DM V Gate-Source Voltage 30 V GS E 2 1200 Single Pulse Avalanche Energy mJ AS I 28 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 780 W D C R 0.16 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT56F50B2 L J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250A Drain-Source Breakdown Voltage 500 V BR(DSS) GS D V /T Reference to 25C, I = 250A Breakdown Voltage Temperature Coef cient 0.60 V/C BR(DSS) J D V = 10V, I = 28A R 3 Drain-Source On Resistance 0.085 0.10 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 500V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J I V = 30V Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 28A fs Forward Transconductance 43 S DS D C Input Capacitance 8800 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 120 rss f = 1MHz C Output Capacitance 945 oss pF 4 C Effective Output Capacitance, Charge Related 550 o(cr) V = 0V, V = 0V to 333V GS DS 5 C Effective Output Capacitance, Energy Related 275 o(er) Q Total Gate Charge 220 g V = 0 to 10V, I = 28A, GS D Q Gate-Source Charge 50 nC gs V = 250V DS Q Gate-Drain Charge gd 100 t Resistive Switching Turn-On Delay Time 38 d(on) t V = 333V, I = 28A Current Rise Time 45 r DD D ns 6 t R = 4.7 , V = 15V Turn-Off Delay Time 100 d(off) G GG t Current Fall Time 33 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I S 38 showing the (Body Diode) integral reverse p-n A Pulsed Source Current junction diode I 175 SM (body diode) 1 (Body Diode) V I = 28A, T = 25C, V = 0V Diode Forward Voltage 1. 2 V SD SD J GS T = 25C 280 J t Reverse Recovery Time ns rr T = 125C 520 J 3 I = 28A T = 25C 1.20 SD J Q Reverse Recovery Charge C rr di /dt = 100A/s T = 125C 3.07 SD J V = 100V T = 25C 10.1 DD J I Reverse Recovery Current A rrm T = 125C 14.5 J I 28A, di/dt 1000A/s, V = 333V, SD DD dv/dt Peak Recovery dv/dt 20 V/ns T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 3.06mH, R = 25, I = 28A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -2.04E-7/V 2 + 4.76E-8/V + 1.36E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8129 Rev D 9-2011