Product Information

APT75GT120JRDQ3

APT75GT120JRDQ3 electronic component of Microchip

Datasheet
IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 55.104 ea
Line Total: USD 55.1

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

APT75GT120JRDQ3
Microchip

1 : USD 72.5819
100 : USD 64.4011

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

APT75GT120JRDQ3
Microchip

1 : USD 50.6046
100 : USD 46.7009

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

APT75GT120JRDQ3
Microchip

1 : USD 55.104

     
Manufacturer
Product Category
Technology
Technology
Electrical Mounting
Semiconductor Structure
Case
Mounting
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
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The APT75GT120JRDQ3 part is a high-voltage, high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip. It is the NPT Med Frequency Combi version of this type of transistor. Its features include an operating temperature range of -55°C to 175°C, a voltage blocking capability of up to 1200V, and current ratings up to 75A. This makes it suitable for use in a wide range of applications from automotive to solar and wind combined systems. The device is equipped with various protection features such as a short-circuit and thermal protection to ensure safe operation and improved reliability. This IGBT is ideal for use where high switching speeds and low switching losses are required.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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