APTM20SKM04G V = 200V DSS Buck chopper R = 4m typ Tj = 25C DSon MOSFET Power Module I = 372A Tc = 25C D Application VBUS Q1 AC and DC motor control Switched Mode Power Supplies G1 Features OUT S1 Power MOS 7 MOSFETs - Low R DSon CR2 - Low input and Miller capacitance - Low gate charge - Avalanche energy rated 0/VBUS - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 200 V DSS T = 25C 372 c I Continuous Drain Current D A T = 80C 278 c I Pulsed Drain current 1488 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 5 DSon m P Maximum Power Dissipation T = 25C 1250 W D c I Avalanche current (repetitive and non repetitive) 100 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 3000 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTM20SKM04G Rev 3 October, 2012 APTM20SKM04G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 200V T = 25C 500 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 160V T = 125C 2000 GS DS j R Drain Source on Resistance V = 10V, I = 186A 4 5 m DS(on) GS D V Gate Threshold Voltage V = V , I = 10mA 3 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V, V = 0V 200 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 28.9 V = 0V iss GS V = 25V nF C Output Capacitance 9.32 DS oss f = 1MHz C Reverse Transfer Capacitance 0.58 rss Q Total gate Charge 560 g V = 10V GS Q Gate Source Charge V = 100V 212 nC gs Bus I = 372A D Q Gate Drain Charge 268 gd T Turn-on Delay Time 32 Inductive switching 125C d(on) V = 15V GS T Rise Time 64 r V = 133V ns Bus T Turn-off Delay Time 88 d(off) I = 372A D R = 1.2 T Fall Time G 116 f Inductive switching 25C E Turn-on Switching Energy 3396 on V = 15V, V = 133V J GS Bus E Turn-off Switching Energy I = 372A, R = 1.2 3716 off D G Inductive switching 125C E Turn-on Switching Energy 3744 on V = 15V, V = 133V J GS Bus E Turn-off Switching Energy 3944 off I = 372A, R = 1.2 D G Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 200 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =200V A RM R T = 125C 750 j I DC Forward Current T = 80C 300 A F c I = 300A 1 1.1 F V Diode Forward Voltage I = 600A 1.4 V F F I = 300A T = 125C 0.9 F j T = 25C 60 j t Reverse Recovery Time ns rr I = 300A F T = 125C 110 j V = 133V R di/dt = 600A/s T = 25C 600 j Q Reverse Recovery Charge nC rr = 125C 2520 T j 2 7 www.microsemi.com APTM20SKM04G Rev 3 October, 2012