ARF469AG ARF469BG TO-264 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 350W 45MHz The ARF469A and ARF469B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. Low Cost Common Source RF Package. Specified 150 Volt, 40.68 MHz Characteristics: Low Vth thermal coefficient. Output Power = 350 Watts. Low Thermal Resistance. Gain = 16dB (Class AB) Optimized SOA for Superior Ruggedness. Efficiency = 75% (Class C) MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter Ratings UNIT V Drain-Source Voltage 500 DSS Volts V Drain-Gate Voltage 500 DGO I Continuous Drain Current T = 25C Amps 30 D C V Gate-Source Voltage Volts 30 GS Total Power Dissipation T = 25C P Watts 445 C D Junction to Case R C/W 0.28 JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 Volts DSS GS D 1 , R Drain-Source On-State Resistance (V = 10V I = 15A) ohms 0.25 0.28 DS(ON) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 250 DS GS C Gate-Source Leakage Current (V = 30V, V = 0V) I 100 nA GS DS GSS g Forward Transconductance (V = 25V, I = 6.5A) mhos 8 fs DS D Gate Threshold Voltage (V = V , I = 1mA) Volts V (TH) 2 4 DS GS D GS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS ARF469AG BG Symbol Characteristic Test Conditions MIN TYP MAX UNIT Input Capacitance C V = 0V 2300 iss GS V = 150V Output Capacitance pF C DS 250 oss f = 1 MHz Reverse Transfer Capacitance C 125 rss FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 40.68 MHz 14 16 dB PS V = 2.5V V = 150V 70 75 Drain Efficiency GS DD % P = 350W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380S, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 20 10,000 V > I (ON) x R (ON)MAX. DS D DS 18 250SEC. PULSE TEST <0.5 % DUTY CYCLE C iss 16 T = -55C J 14 1,000 12 10 C oss 8 C 100 rss 6 T = -55C J 4 T = +25C J 2 T = +125C J 10 0 0 1 2 3 4 5 6 7 8 0 100 200 300 400 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , GATE-TO-SOURCE VOLTAGE (VOLTS) DS GS Figure 2, Typical Transfer Characteristics Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 8 7 6 5 4 3 2 1 0 -50 0 50 100 150 T , CASE TEMPERATURE (C) C Figure 3, Typical Maximum Safe Operating Area Figure 4, Typical Threshold Voltage vs Temperature 050-4983 Rev B 2-2021 CAPACITANCE (pf) I , DRAIN CURRENT (AMPERES) V , THRESHOLD VOLTAGE D GS(th) (NORMALIZED)