ARF463BG

D ARF463A(G) G ARF463B(G) S TO-247 Common Source RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. Specified 125 Volt, 81.36 MHz Characteristics: Low Cost Common Source RF Package. Output Power = 100 Watts. Low Vth thermal coefficient. Gain = 15dB (Class AB) Low Thermal Resistance. Efficiency = 75% (Class C) Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter ARF463A/B(G) UNIT V Volts Drain-Source Voltage 500 DSS I Continuous Drain Current T = 25C 9 Amps D C V Gate-Source Voltage 30 Volts GS P Total Power Dissipation T = 25C 180 Watts D C R Junction to Case 0.70 C/W JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 DSS GS D Volts 1 V (ON) On State Drain Voltage (I (ON) = 4.5A, V = 10V) 5.0 DS D GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS g Forward Transconductance (V = 25V, I = 4.5A) 46 mhos fs DS D V (TH) Gate Threshold Voltage (V = V , I = 50mA) 35 Volts GS DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS ARF463A/B(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 1200 1600 iss V = 0V GS C Output Capacitance V = 50V 140 200 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 912 rss t Turn-on Delay Time 5.1 10 d(on) V = 15V GS t Rise Time V = 0.5 V 4.1 8 r DD DSS ns I = I 25C t Turn-off Delay Time D D Cont. 12.8 20 d(off) R = 1.6 t G Fall Time 48 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 81.36 MHz 13 15 dB PS I = 50mA V = 125V Drain Efficiency dq DD 60 65 % P = 100W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C V = 150V C iss DD 25 1000 P = 150W out 500 20 C oss 15 100 10 50 5 C rss 10 0 30 45 60 75 90 105 120 .1 .5 1 5 10 50 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 12 36 100uS V > I (ON) x R (ON)MAX. DS D DS OPERATION HERE 250SEC. PULSE TEST T = -55C J LIMITED BY R (ON) DS <0.5 % DUTY CYCLE 10 10 1mS 8 5 6 10mS 1 T = +25C 4 J 100mS .5 DC T =+25C 2 C T = +125C J T =+150C J SINGLE PULSE 0 .1 0123456 1 10 100 500 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-5998 Rev B 6-2003 I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D