Product Information

PD57006STR-E

PD57006STR-E electronic component of STMicroelectronics

Datasheet
RF MOSFET Transistors RF Power Transistor N Chnl
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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PD57006STR-E
STMicroelectronics

1 : USD 16.4449
10 : USD 15.1282
25 : USD 14.4976
100 : USD 13.402
250 : USD 12.7512
600 : USD 12.2571
1200 : USD 12.0763
2400 : USD 11.1603
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Height
Length
Type
Width
Brand
Channel Mode
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 6 W with 15dB gain 945 MHz / 28 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic PowerSO-10RF RF power package, PowerSO-10RF. Devices (straight lead) superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, Figure 1. Pin connection is the first ST JEDEC approved, high power SMD Source package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57006-E PowerSO-10RF (formed lead) Tube PD57006S-E PowerSO-10RF (straight lead) Tube PD57006TR-E PowerSO-10RF (formed lead) Tape and reel PD57006STR-E PowerSO-10RF (straight lead) Tape and reel January 2011 Doc ID 12611 Rev 3 1/22 www.st.com 22Contents PD57006-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57006-E . 7 4.2 PD5706S-E 9 5 Test circuit 12 6 Common source s-parameter 14 7 Package mechanical data 16 8 Revision history . 21 2/22 Doc ID 12611 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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