PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 6 W with 15dB gain 945 MHz / 28 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic PowerSO-10RF RF power package, PowerSO-10RF. Devices (straight lead) superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, Figure 1. Pin connection is the first ST JEDEC approved, high power SMD Source package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57006-E PowerSO-10RF (formed lead) Tube PD57006S-E PowerSO-10RF (straight lead) Tube PD57006TR-E PowerSO-10RF (formed lead) Tape and reel PD57006STR-E PowerSO-10RF (straight lead) Tape and reel January 2011 Doc ID 12611 Rev 3 1/22 www.st.com 22Contents PD57006-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57006-E . 7 4.2 PD5706S-E 9 5 Test circuit 12 6 Common source s-parameter 14 7 Package mechanical data 16 8 Revision history . 21 2/22 Doc ID 12611 Rev 3