Product Information

JAN2N6301

JAN2N6301 electronic component of Microchip

Datasheet
Trans Darlington NPN 80V 8A 3-Pin(2+Tab) TO-66

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.9405 ea
Line Total: USD 7.94

2522 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2522 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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JAN2N6301
Microchip

1 : USD 7.9405

2522 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

JAN2N6301
Microchip

1 : USD 33.6554

     
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2N6300 and 2N6301 Qualified Levels: NPN Darlington Power Silicon Transistor JAN, JANTX, and Available Qualified per MIL-PRF-19500/539 JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. TO-213AA (TO-66) Package Important: For the latest information, visit our website 2N6300 and 2N6301 MECHANICAL and PACKAGING CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on commercial grade only. MARKING: MSC, part number, date code, polarity symbol WEIGHT: Approximately 5.7 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6300 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Base current: The value of the dc current into the base terminal. I B I Collector current: The value of the dc current into the collector terminal. C Emitter current: The value of the dc current into the emitter terminal. I E T Case temperature: The temperature measured at a specified location on the case of a device. C V Collector-base voltage: The dc voltage between the collector and the base. CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. V CC Collector-emitter voltage: The dc voltage between the collector and the emitter. V CE Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base V CEO terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base V EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal V EBO open-circuited. T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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