2N6034G ON Semiconductor

2N6034G electronic component of ON Semiconductor
2N6034G ON Semiconductor
2N6034G Darlington Transistors
2N6034G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N6034G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6034G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. 2N6034G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 40 V 4 A 40 W Through Hole TO-126
Datasheet: 2N6034G Datasheet (PDF)
Price (USD)
598: USD 0.653 ea
Line Total: USD 390.49 
Availability : 2425
  
Ship by Fri. 15 Aug to Thu. 21 Aug
QtyUnit Price
598$ 0.653
1000$ 0.5791
10000$ 0.5162
100000$ 0.4325

Availability 9
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 0.644
10$ 0.574
25$ 0.504
38$ 0.5026
100$ 0.4578


Availability 10099
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 598
Multiples : 1
QtyUnit Price
598$ 0.653
1000$ 0.5791
10000$ 0.5162
100000$ 0.4325


Availability 2425
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 598
Multiples : 1
QtyUnit Price
598$ 0.653
1000$ 0.5791
10000$ 0.5162
100000$ 0.4325

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6034G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6034G and other electronic components in the Darlington Transistors category and beyond.

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2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) C B 2N6034G 40 2N6035G, 2N6038G 60 2N6036G, 2N6039G 80 CollectorCutoff Current I A CEO (V = 40 Vdc, I = 0) CE B 2N6034G 100 (V = 60 Vdc, I = 0) CE B 2N6035G, 2N6038G 100 (V = 80 Vdc, I = 0) CE B 2N6036G, 2N6039G 100 CollectorCutoff Current I A CEX (V = 40 Vdc, V = 1.5 Vdc) CE BE(off) 2N6034G 100 (V = 60 Vdc, V = 1.5 Vdc) CE BE(off) 2N6035G, 2N6038G 100 (V = 80 Vdc, V = 1.5 Vdc) CE BE(off) 2N6036G, 2N6039G 100 (V = 40 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6034G 500 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6035G, 2N6038G 500 (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 500 2N6036G, 2N6039G CollectorCutoff Current I mAdc CBO (V = 40 Vdc, I = 0) CB E 2N6034G 0.5 (V = 60 Vdc, I = 0) CB E 2N6035G, 2N6038G 0.5 (V = 80 Vdc, I = 0) CB E 2N6036G, 2N6039G 0.5 EmitterCutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 0.5 Adc, V = 3.0 Vdc) 500 C CE (I = 2.0 Adc, V = 3.0 Vdc) 750 15,000 C CE (I = 4.0 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 2.0 Adc, I = 8.0 mAdc) C B 2.0 (I = 4.0 Adc, I = 40 mAdc) C B 3.0 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 4.0 Adc, I = 40 mAdc) 4.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 Adc, V = 3.0 Vdc) 2.8 C CE DYNAMIC CHARACTERISTICS SmallSignal CurrentGain h 25 fe (I = 0.75 Adc, V = 10 Vdc, f = 1.0 MHz) C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E 2N6034G, 2N6035G, 2N6036G 200 2N6038G, 2N6039G 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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