NTE2391 NTE

NTE2391 MOSFET PChannel Enhancement Mode, High Speed Switch TO220 Type Package Description: The NTE2391 is a PChannel Enhancement Mode Power MOS Field Effect Transistor that utilizes ad- vanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. D Features: Ultra Low On Resistance Dynamic dv/dt Rating +175 C Operating Temperature Fast Switching G Fully Avalanche Rated S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25C ................................................................. 40A C T = +100C ................................................................ 29A C Pulsed Drain Current (Note 1), I ................................................. 140A DM Power Dissipation (T = +25C), P ................................................ 200W C D Derate Above 25 C ....................................................... 1.3W/ C GateSource Voltage, V ......................................................... 20V GS Single Pulse Avalanche Energy (Note 2), E ....................................... 780mJ AS Avalanche Current (Note 1), I ..................................................... 21A AR Repetitive Avalanche Energy (Note 1), E .......................................... 20mJ AR Peak Diode Recovery (Note 3), dv/dt ............................................ 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +175C J Storage Temperature Range, T .......................................... 55 to +175C stg Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), T .......... +300 C L Mounting Torque, 6 32 or M3 Screw ..................................... 10 lbf in (1.1N m) Maximum Thermal Resistance, Junction toCase, R ........................... 0.75 C/W thJC Typical Thermal Resistance, Case toSink, R .................................. 0.5 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 62 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25C, L = 3.5mH, R = 25, I = 21A. DD J G AS Note 3. I 21A, di/dt 480A/s, V V , T +175C. SD DD (BR)DSS JElectrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 250A, V = 0 100 V (BR)DSS D GS Breakdown Voltage Temp. Coefficient V / Reference to +25 C, I = 1mA 0.11 V/C (BR)DSS D T J Static DrainSource On Resistance R V = 10V, I = 24A, Note 4 0.06 DS(on) GS D Gate Threshold Voltage V V = V , I = 250A 2 4 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 21A 10 S fs DS D DrainSource Leakage Current I V = 0, V = 100V 25 A DSS GS DS V = 0, V = 80V, 250 A GS DS T = +150C C GateBody Leakage Current I V = 0, V = 20V 100 nA GSS DS GS Total Gate Charge Q V = 10V, I = 21A, 180 nC g GS D V = 80V, Note 4 DS GateSource Charge Q 25 nC gs GateDrain (Miller) Charge Q 97 nC gd TurnOn Time t V = 50V, I = 21A, 17 ns d(on) DD D R = 2.5, R = 2.4, Note 4 G D Rise Time t 86 ns r TurnOff Delay Time t 79 ns d(off) Fall Time t 81 ns f Input Capacitance C V = 25V, V = 0, f = 1MHz 2700 pf iss DS GS Output Capacitance C 790 pf oss Reverse Transfer Capacitance C 450 pf rss Internal Drain Inductance L Between lead, 6mm (0.25 in.) 4.5 nH D from package and center of die Internal Source Inductance L 7.5 nH S contact SourceDrain Diode Ratings and Characteristics Continuous Source Current I 40 A S (Body Diode) Pulsed Source Current (Body Diode) I Note 1 140 A SM Diode Forward Voltage V I = 21A, V = 0, 1.6 V SD S GS T = +25C, Note 4 J Reverse Recovery Time t 170 260 ns I = 21A, di/dt = 100A/s, rr F T = +25C, Note 4 J Reverse Recovered Charge Q 1.2 1.8 C rr Forward TurnOn Time t Intrinsic turn-on time is negligible (turn-on is dominated by L + L ) on S D Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse test: Pulse Width 300s, Duty Cycle 2%.