MSC050SDA070S Microchip

MSC050SDA070S Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. The MSC050SDA070S is a 700 V, 50 A SiC SBD. 1.1 Features The following are key features of the MSC050SDA070S device: No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC050SDA070S device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC050SDA070S device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4101 MSC050SDA070S Datasheet Revision A 12 Device Specifications This section shows the specifications of the MSC050SDA070S device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC050SDA070S device. All ratings at TC = 25 C unless otherwise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 700 V VRRM Maximum peak repetitive reverse voltage 700 VRWM Maximum working peak reverse voltage 700 IF Maximum DC forward current Tc = 25 C 88 A Tc = 135 C 39 Tc = 145 C 32 IFRM Repetitive peak forward surge current (tP = 8.3 ms, half sine wave) 128 IFSM Non-repetitive forward surge current (tP = 8.3 ms, half sine wave) 124 PTOT Power dissipation Tc = 25 C 283 W Tc = 110 C 123 TJ , TSTG Operating junction and storage temperature range 55 to 175 C TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy 100 mJ (starting TJ = 25 C, L = 0.08 mH, peak IL = 50 A) The following table shows the thermal and mechanical characteristics of the MSC050SDA70S device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RJC Junction-to-case thermal resistance 0.37 0.53 C/W Wt Package weight 0.14 oz 4.0 g 053-4101 MSC050SDA070S Datasheet Revision A 2