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UJ3D06512TS

UJ3D06512TS electronic component of UnitedSiC

Datasheet
Schottky Diodes & Rectifiers 650V12A SiC SCHOTTKY DIODE G3 TO-220 ENHANCED SURGE
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.0519 ea
Line Total: USD 6.05

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

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UJ3D06512TS
UnitedSiC

1 : USD 6.0519
10 : USD 3.9664
100 : USD 3.2415

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Additional Infomation About Product

12A - 650V SiC Schottky Diode Rev. A, June 2019 DATASHEET Description rd United Silicon Carbide, Inc. offers the 3 generation of high UJ3D06512TS performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CASE Features CASE w Maximum operating temperature of 175C w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered w 100% UIS tested 1 2 w AEC-Q101 qualified 1 2 Typical applications w Power converters Part Number Package Marking w Industrial motor drives w Switch mode power supplies UJ3D06512TS TO-220-2L UJ3D06512TS w Power factor correction modules Datasheet: UJ3D06512TS Rev. A, June 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V DC blocking voltage 650 V R Repetitive peak reverse voltage, T =25C V 650 V J RRM Surge peak reverse voltage V 650 V RSM T = 153C Maximum DC forward current I 12 A C F T = 25C, t = 10ms Non-repetitive forward surge current 81 C p I A FSM sine halfwave T = 110C, t = 10ms 70 C p T = 25C, t = 10ms Repetitive forward surge current 53 C p I A FRM sine halfwave, D=0.1 T = 110C, t = 10ms 32.5 C p T = 25C, t = 10ms 480 C p I Non-repetitive peak forward current A F,max T = 110C, t = 10ms 480 C p T = 25C, t = 10ms 32.8 C p 2 2 2 i t value i dt A s T = 110C, t = 10ms 24.5 C p T = 25C 187.5 C P Power dissipation W tot T = 153C 27.5 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only T 1.6mm from case for 10s 260 C sold allowed at leads Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.6 0.8 C/W qJC Datasheet: UJ3D06512TS Rev. A, June 2019 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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