UPS120EE3/TR7 Microchip

UPS120Ee3 Low Leakage Schottky Barrier Rectifier Main product characteristics I 1A O V 20V RRM T 125C j(MAX) V 0.455V F(MAX) I 10A R(MAX) Features and benefits Low forward voltage drop Powermite 1 Low profile package height (DO-216AA) Efficient heat path with integral locking bottom metal tab Low thermal resistance DO-216AA package Description and applications Single schottky rectifier assembled in Powermite 1 package which features a full metallic bottom that eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with very low thermal resistance junction to case (bottom). This product is suitable for use in switching and regulating power supplies and also charge pump circuits. (1) Absolute maximum ratings Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage RRM V Working Peak Reverse Voltage 20 V RWM V DC Blocking Voltage R V RMS Reverse Voltage 14 V R(RMS) Average rectified forward output current I 1.0 A O (T = 135C) C Peak repetitive forward current I 2.0 A FRM (100kHz square wave, T = 135C) C Non repetitive peak forward surge current I 50 A FSM (8.3ms single half sine wave) dV/dt Voltage rate of change (at max V) 10000 V/s R T Storage temperature -55 to +150 C STG T Junction temperature -55 to +125 C J (1) All ratings at 25C unless specified otherwise Copyright 2008 1/4 www.Microsemi.com June 2008 Rev E UPS120Ee3 Low Leakage Schottky Barrier Rectifier Characteristics Static Electrical Characteristics Symbol Parameter Test Conditions Typ max Units I = 0.1 A 0.455 F T = 25C I = 1.0 A 0.530 J F I = 3.0 A 0.595 (2) F V Maximum forward voltage V F I = 0.1 A 0.360 F T = 100C I = 1.0 A 0.455 J F I = 3.0 A 0.540 F V = 20V 10 R T = 25C V = 10V 1.0 J R = 5V 0.5 Maximum instantaneous V (2) R I A R reverse current V = 20V 1600 R T = 100C V = 10V 500 J R V = 5V 300 R C Junction capacitance V = 5V, f = 1MHz pF T R (2) Measured with a test pulse of 380s to minimize self-heating effect Thermal Characteristics Symbol Parameter Value Unit R Junction to case (bottom) 15 C/W JC (3) R Junction to ambient 240 C/W JA (3) Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of T therefore must J include forward and reverse power effects. The allowable operating T may be calculated from the equation: J T = T = r(t)(Pf+Pr) where J J max r(t) = thermal impedance under given conditions. Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the de-rated allowable T due to reverse bias J under DC conditions only and is calculated as T = T -r(t) Pr, J J max Where r(t)=Rthja. For other power applications further calculations must be performed. Copyright 2008 2/4 www.Microsemi.com June 2008 Rev E