MSJU11N65 Features Very Low FOM R Q DS(on) g Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix-H Super-Junction Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Power MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 62C/W Junction to Ambient DPAK Thermal Resistance: 1.6C/W Junction to Case J Parameter Rating Symbol Unit H 1 Drain-Source Voltage V 650 V C DS O F 2 4 E Gate-Source Volltage V 30 V GS I 3 I Continuous Drain Current 11 A D M (Note 1) K V I 33 Pulsed Drain Current A DM Q (Note 2) E 211 mJ Single Pulse Avalanche Energy AS A (Note 1) G I 1.6 Avalanche Current A AR L D B (Note 1) E 0.32 mJ Repetitive Avalanche Energy AR Total Power Dissipation T =25C P 78 W C D DIMENSIONS Note: 1. Repetitive Rating, Pulse Width Limited by Maximum Junction INCHES MM DIM NOTE Temperature. MIN MAX MIN MAX 2. I =1.6A, V =50V, R =25, Starting T =25C. AS DD G J A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 Internal Structure F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. H 0.236 0.244 6.00 6.20 D I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 K 0.114 2.90 TYP. L 0.055 0.067 1.40 1.70 1.GATE 0.063 1.60 TYP. G M 2.DRAIN O 0.043 0.051 1.10 1.30 3.SOURCE 4.DRAIN Q 0.000 0.012 0.00 0.30 S 0.211 5.35 TYP. V Rev.3-2-12012020 1/4 MCCSEMI.COMMSJU11N65 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 650 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =30V 100 nA GSS DS GS V =650V, V =0V 1 DS GS Zero Gate Voltage Drain Current I A DSS V =650V, V =0V, T =150C 100 DS GS J V V =V , I =250A Gate-Threshold Voltage 2.5 4 V GS(th) DS GS D (Note 3) R V =10V, I =5.5A 0.34 0.38 Drain-Source On-Resistance DS(on) GS D (Note 3) g V =10V, I =5.5A 7.8 S Forward tranconductance FS DS D (Note 4) Dynamic Characteristics C Input Capacitance 901 iss V =50V,V =0V,f=1MHz Output Capacitance C 50 pF DS GS oss C Reverse Transfer Capacitance 5.5 rss Total Gate Charge Q 21 g Q V =520V,V =10V,I =11A Gate-Source Charge 4.5 nC gs DD GS D Q Gate-Drain Charge 7 gd t Turn-On Delay Time 41 d(on) t Turn-On Rise Time 20 r V =400V, I =11A,R =25 ns DD D G t Turn-Off Delay Time 123 d(off) t Turn-Off Fall Time 6.4 f Drain-Source Body Diode Characteristics I Continuous Body Diode Current 9.2 S T =25C A C Pulsed Diode Forward Current I 29 SM V I =11A, V =0V Body Diode Voltage 0.9 1.2 V SD SD GS Reverse Recovery Time t 280 ns rr Q V =520V, I =I ,di /dt=100A/s Reverse Recovery Charge 2.8 C rr R F S F Peak Reverse Recovery Current I 17 A rrm Note 3. Pulse Test : Pulse Width 300s, Duty Cycle 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-2-12012020 2/4 MCCSEMI.COM