Product Information

FCMT125N65S3

Name: FCMT125N65S3
Brand: ON Semiconductor
SKU: FCMT125N65S3_ONSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

FCMT125N65S3 electronic component of ON Semiconductor

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Datasheet

MOSFET SF3 650V 125MOHM MO SFET

Manufacturer: ON Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.8078 ea
Line Total: USD 5.81

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Mon. 27 May MOQ : 1 Multiples : 1 FCMT125N65S3 ON Semiconductor	1 : USD 4.9003 10 : USD 4.3277 30 : USD 3.9864 100 : USD 3.6429 500 : USD 3.2286 1000 : USD 3.158

0 - WHS 2 Ships to you between Tue. 21 May to Thu. 23 May MOQ : 1 Multiples : 1 FCMT125N65S3 ON Semiconductor	1 : USD 5.4253 10 : USD 3.5522 25 : USD 3.3658 100 : USD 2.9101 500 : USD 2.4855 1000 : USD 2.1748 3000 : USD 2.0919

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Additional Infomation About Product

The FCMT125N65S3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ON Semiconductor. It is a 650V Surface Mount High Side MOSFET with a RDS(on) (drain-to-source resistance) of 125mOhms. This device is capable of operating at up to 250 kHz and features an ultra-low Qg (gate charge). This allows for fast switching to meet demanding requirements in applications such as motor drives and consumer electronics. The FCMT125N65S3 is already integrated into several devices, such as power supplies and power converters, allowing them to control high current levels with minimal power loss. With its low gate charge, this MOSFET is perfect for any application where fast switching and efficient operation are essential.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ON Semiconductor ON Semiconductor
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 24 A 24 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 125 mOhms 125 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 181 W 181 W
Mounting Style Smd/Smt Smd/Smt
Package / Case PQFN - 4 PQFN - 4
Packaging Cut Tape Cut Tape
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 49 nC 49 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand On Semiconductor On Semiconductor
Forward Transconductance - Min 16 S 16 S
Fall Time 5.8 ns 5.8 ns
Product Type Mosfet Mosfet
Rise Time 22 ns 22 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 60 ns 60 ns
Typical Turn-On Delay Time 22 ns 22 ns