8GB (x72, ECC, SR) 288-Pin DDR4 RDIMM Features DDR4 SDRAM RDIMM MTA9ASF1G72PZ 8GB Figure 1: 288-Pin RDIMM (MO-309, R/C-D1) Features Module height: 31.25mm (1.23in) DDR4 functionality and operations supported as defined in the component data sheet 288-pin, registered dual in-line memory module (RDIMM) Fast data transfer rates: PC4-3200, PC4-2933, or PC4-2666 Options Marking 8GB (1 Gig x 72) Operating temperature V = 1.20V (NOM) DD Commercial (0C T +95C) None OPER V = 2.5V (NOM) PP Package V = 2.5V (NOM) DDSPD 288-pin DIMM (halogen-free) Z Supports ECC error detection and correction Frequency/CAS latency Nominal and dynamic on-die termination (ODT) for 0.62ns CL = 22 (DDR4-3200) -3G2 data, strobe, and mask signals 0.682ns CL = 21 (DDR4-2933) -2G9 0.75ns CL = 19 (DDR4-2666) -2G6 Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die V generation and calibration REFDQ Single-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = t t t 22/ RCD RP RC PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -3G2 3200 3200 3200/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 13.75 13.75 45.75 -2G9 2933 2933/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.32 14.32 46.32 2933 -2G6 2666 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 CCMTD-1725822587-9904 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf9c1gx72pz.pdf - Rev. F 12/17 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Speed Grade8GB (x72, ECC, SR) 288-Pin DDR4 RDIMM Features Table 1: Key Timing Parameters (Continued) Data Rate (MT/s) CL = t t t 22/ RCD RP RC PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -2G3 2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 2133 2133 2133 1866 1866 1600 1600 1333 1333 13.5 13.5 46.5 Table 2: Addressing Parameter 8GB Row address 64K A 15:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (1 Gig x 8), 16 banks Module rank address 1 CS0 n Table 3: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT40A1G8, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA9ASF1G72PZ-3G2 8GB 1 Gig x 72 25.6 GB/s 0.62ns/3200 MT/s 22-22-22 MTA9ASF1G72PZ-2G9 8GB 1 Gig x 72 23.47 GB/s 0.682ns/2933 MT/s 21-21-21 MTA9ASF1G72PZ-2G6 8GB 1 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA9ASF1G72PZ-3G2E1. CCMTD-1725822587-9904 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf9c1gx72pz.pdf - Rev. F 12/17 EN 2015 Micron Technology, Inc. All rights reserved. Speed Grade