66183 PROTON RADIATION TOLERANT 6 PIN LCC OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION 03/11/2009 Features: Applications: High Reliability Eliminate ground loops Base lead provided for conventional transistor Level shifting biasing Line receiver Rugged package Switching power supplies Stability over wide temperature Motor control +1000V electrical isolation JANS Level screening available DESCRIPTION The 66183 is a single channel device electrically similar to the 4N49. This product has been designed to be more tolerant to proton radiation. The 66183 optocoupler is packaged in a hermetically sealed 6 pin leadless chip carrier (LCC). This device can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500 to Class S level. ABSOLUTE MAXIMUM RATINGS Input to Output Isolation Voltage ........................................................................................................................................... 1 kV Input Diode Continuous Forward Current ......................................................................................................................... 40 mA Peak Forward Input Current (value applies for tw 10 s, PRR < 300 pps) ........................................................................... 1 A Reverse Input Voltage ............................................................................................................................................................ 2 V Input Power Dissipation (Note 1) ... 80 mW Emitter-Base Voltage ............................................................................................................................................................... 7 V Collector-Emitter Voltage (Value applies to emitter-base open-circuited and the input diode equal to zero) .................... 60 V Collector-Base Voltage .......................................................................................................................................................... 60 V Continuous Collector Current ............................................................................................................................................. 50 mA Continuous Transistor Power Dissipation (Note 2) .300 mW Storage Temperature ......................................................................................................................................... -65C to +150C Operating Free-Air Temperature Range ............................................................................................................ -55C to +125C Lead Solder Temperature (10 seconds max.) ................................................................................................................... 240C Notes: 1. Derate linearly at the rate of 1.33 mW/C above 65C case. 2. Derate linearly at the rate of 3 mW/C above 25C case. Package Dimensions Schematic Diagram 0.250 6.35 0.080 2.03 0.240 6.10 0.066 1.68 3 C A 1 0.175 4.45 0.165 4.19 PIN 1 IDENTIFIER 0.028 0.71 0.022 0.56 0.105 2.67 2 0.095 2.41 3 5 E 4 1 4 B 5 K 6 6 0.098 2.49 0.055 1.40 0.082 2.08 0.045 1.14 0.070 1.78 5 PLS 0.060 1.52 ALL DIMENSIONS ARE IN INCHES MILLIMETERS MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM 66183 PROTON RADIATION TOLERANT 6 PIN LCC OPTOCOUPLER 03/11/2009 ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified. A PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE Input Diode Static Reverse Current I 10 A V = 2 V R R Input Diode Static Forward Voltage -55C V 1.0 2.2 V I = 10 mA F F Input Diode Static Forward Voltage +25C V 0.8 1.8 2.0 V I = 10 mA F F Input Diode Static Forward Voltage +100C V 0.8 2.2 V I = 10 mA F F OUTPUT TRANSISTOR T = 25C unless otherwise specified. A PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage V 45 V I = 100 A, I = 0, I = 0 (BR)CBO C B F Collector-Emitter Breakdown Voltage V 40 V I = 1 mA, I = 0, I = 0 (BR)CEO C B F Emitter-Base Breakdown Voltage V 7 V I = 0 mA, I = 100 A, I = 0 (BR)EBO C E F Off-State Collector Current 100 nA I V = 20 V, I = 0 mA, I = 0 CEO CE F B +100C 100 A COUPLED CHARACTERISTICS T = 25C unless otherwise specified. A PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE On State Collector Current I 2.0 mA V = 5 V, I = 1 mA, I=0 B C(ON) CE F On State Collector Current +100C I 2.0 mA V = 5.0 V, I = 2 mA, I=0 B C(ON) CE F On State Collector Current -55C I 2.8 mA V = 5 V, I = 2 mA, I=0 B C(ON) CE F Collector-Emitter Saturation Voltage V 0.3 V I = 2 mA, I = 2 mA CE(SAT) F C Input to Output Isolation Voltage V 1000 V I = 100 nA 1 I-O I-O Input to Output Capacitance C 2.5 5 pF f = 1MHz, V = 1000 V 1 IO I-O V = 10 V, I = 10 mA, CC F Rise Time-Phototransistor Operation t 10 25 s 2 r R = 100 , I = 0 L B V = 10V, I = 10mA, CC F Fall Time-Phototransistor Operation t 10 25 s 2 f R = 100 , I = 0 L B NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter must be measured using pulse techniques (t = 100 s duty cycle < 1%). W RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level I 0 90 A FL Input Current, High Level I 2 10 mA FH Supply Voltage V 5 10 V CE Operating Temperature T -55 100 C A SELECTION GUIDE PART NUMBER PART DESCRIPTION 66183-001 Commercial 66183-101 Screened to JAN level 66183-103 Screened to JANTX level 66183-105 Screened to JANTXV level 66183-300 Screened to JANS level MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM