ME35N10-G MQTSUKI

ME35N10-G electronic component of MQTSUKI
ME35N10-G MQTSUKI
ME35N10-G MOSFETs
ME35N10-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ME35N10-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. ME35N10-G MOSFETs are a product manufactured by MQTSUKI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. ME35N10-G
Manufacturer: MQTSUKI
Category: MOSFETs
Description: MOSFET TO-252-3L RoHS
Datasheet: ME35N10-G Datasheet (PDF)
Price (USD)
1: USD 0.3428 ea
Line Total: USD 0.34 
Availability : 0
  
QtyUnit Price
1$ 0.3428
10$ 0.3352
30$ 0.3313
100$ 0.3256

Availability 0
Ship by Thu. 09 Oct to Wed. 15 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3428
10$ 0.3352
30$ 0.3313
100$ 0.3256

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ME35N10-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ME35N10-G and other electronic components in the MOSFETs category and beyond.

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The ME35N10-G MOSFET manufactured by MQTSUKI is a three-terminal N-channel enhancement mode MOSFET housed in a TO-252-3L RoHS compliant surface mount package. It is designed for use in switching and amplifier circuits, and features 10V drain source breakdown voltage, -25°C to 125°C operating junction temperature range, 0.38O on resistance, and max drain current of 1A. It is ideal for use in battery-powered automotive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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