MEE15N10-G MQTSUKI

MEE15N10-G electronic component of MQTSUKI
MEE15N10-G MQTSUKI
MEE15N10-G MOSFETs
MEE15N10-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MEE15N10-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. MEE15N10-G MOSFETs are a product manufactured by MQTSUKI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. MEE15N10-G
Manufacturer: MQTSUKI
Category: MOSFETs
Description: MOSFET TO-252-3L RoHS
Datasheet: MEE15N10-G Datasheet (PDF)
Price (USD)
1: USD 0.256 ea
Line Total: USD 0.26 
Availability : 0
  
QtyUnit Price
1$ 0.256
10$ 0.2105
30$ 0.1909
100$ 0.1666
500$ 0.1557
1000$ 0.1428

Availability 0
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.256
10$ 0.2105
30$ 0.1909
100$ 0.1666
500$ 0.1557
1000$ 0.1428

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif
 
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We are delighted to provide the MEE15N10-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MEE15N10-G and other electronic components in the MOSFETs category and beyond.

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The MEE15N10-G with MOSFET TO-252-3L RoHS manufactured by MQTSUKI is an N-channel enhancement-mode power MOSFET. It is a single discrete device with a TO-252-3L (DPAK) package and has a RoHS-compliant lead-free finish. This power transistor is designed for use in power management and load switching applications at frequencies up to 50MHz. It features an ultra low RDS(on) of 15mOhm and a drain current rating of 10A. The transistor also has an avalanche energy rating of 88mJ, making it ideal for applications that require overvoltage protections. The operating junction temperature of the device is between -55C to +150C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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