BUK7K6R8-40E Nexperia

BUK7K6R8-40E Dual N-channel 40 V, 6.8 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V Tmb = 25 C Fig. 1 - - 40 A D GS P total power dissipation T = 25 C Fig. 2 - - 64 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 20 A T = 25 C - 5.8 6.8 m DSon GS D j resistance Fig. 12 Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 20 A V = 32 V V = 20 V - 9.1 - nC GD D DS GS T = 25 C Fig. 14 Fig. 15 j Scan or click this QR code to view the latest information for this product LFPAK56DNXP Semiconductors BUK7K6R8-40E Dual N-channel 40 V, 6.8 m standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K6R8-40E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K6R8-40E 76E840 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k T 25 C T 175 C - 40 V DGR GS j j V gate-source voltage T 175 C DC -20 20 V GS j I drain current V = 10 V Tmb = 25 C Fig. 1 - 40 A D GS T = 100 C V = 10 V Fig. 1 - 40 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 276 A DM mb p P total power dissipation T = 25 C Fig. 2 - 64 W tot mb BUK7K6R8-40E All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 6 November 2013 2 / 13