MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m NVHL110N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge V R MAX I MAX balance technology for outstanding low on-resistance and lower gate DSS DS(on) D charge performance. This advanced technology is tailored to minimize 650 V 110 m 10 V 30 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. D Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability. G Features 700 V T = 150C J S Typ. R = 93 m DS(on) NChannel MOSFET Ultra Low Gate Charge (Typ. Q = 58 nC) g Low Effective Output Capacitance (Typ. C = 553 pF) oss(eff.) 100% Avalanche Tested AECQ101 Qualified and PPAP Capable Applications G D Automotive On Board Charger HEVEV S TO247 LONG LEADS Automotive DC/DC converter for HEVEV CASE 340CX MARKING DIAGRAM Y&Z&3&K NVHL 110N65S3F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NVHL110N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: September, 2020 Rev. 2 NVHL110N65S3F/DNVHL110N65S3F ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 30 A D C Continuous (T = 100C) 19.5 C I Drain Current Pulsed (Note 1) 69 A DM E Single Pulsed Avalanche Energy (Note 2) 380 mJ AS E Repetitive Avalanche Energy (Note 1) 2.4 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 240 W D C Derate Above 25C 1.92 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 3.5 A, R = 25 , starting T = 25C. AS G J 3. I 15 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.52 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL110N65S3F NVHL110N65S3F TO247 Tube N/A N/A 30 Units www.onsemi.com 2