DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 2 V = 4V 100mA GS Low Input/Output Leakage 60V 2.5 V = 2.5V 50mA GS ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: X1-DFN1006-3 This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, Case Material: Molded Plastic,Gree Molding Compound DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish NiPdAu over Copper Leadframe. Power Management Functions e4 Solderable per MIL-STD-202, Method 208 Battery Operated Systems and Solid-State Relays Weight: 0.001 grams (Approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Drain Memories, Transistors, etc. X1-DFN1006-3 Gate S D Gate G Protection Source Diode Top View Bottom View ESD PROTECTED Equivalent Circuit Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN62D0LFB-7 NK 7 8 3,000 DMN62D0LFB-7B NK 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NK NK NK DMN62D0LFB Marking Information From date code 1527 (YYWW), NK NK this changes to: Top View Top View Dot Denotes Drain Side Bar Denotes Gate and Source Side DMN62D0LFB-7 NK NK = Part Marking Code Top View Bar Denotes Gate and Source Side DMN62D0LFB-7B Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 100 A Continuous Drain Current (Note 5) V = 4.0V I mA GS D State 75 T = +70C A Pulsed Drain Current (Note 6) 200 mA I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) P 0.47 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 258 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 2 of 7 May 2015 DMN62D0LFB www.diodes.com Diodes Incorporated Document number: DS35409 Rev. 5 - 2 NEW PRODUCT ADVANCE INFORMATION NK NK NK NK NK NK