DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See Diagram Low Input/Output Leakage Terminals: Finish - Matte Tin Annealed over Copper e3 Ultra-Small Surface Mount Package Leadframe. Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) An Automotive-Compliant Part is Available Under Separate Datasheet (DMN601VKQ) D G S 2 1 1 SOT563 S G D 2 2 1 ESD Protected up to 2kV TOP VIEW TOP VIEW Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN601VK-7 SOT563 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN601VK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Continuous 305 Drain Current (Note 5) I mA D Pulsed (Note 6) 800 Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient 500 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current 250 nA I V = 50V, V = 0V DSS DS GS 500 V = 10V, V = 0V GS DS Gate-Source Leakage I nA GSS 100 V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.0 1.6 2.5 V V V = V , I = 250A GS(th) DS GS D V = 10V, I = 0.5A 2.0 GS D Static Drain-Source On-Resistance R DS(ON) 3.0 V = 4.5V, I = 200mA GS D Forward Transfer Admittance Y 284 ms V =10V, I = 0.2A fs DS D Diode Forward Voltage (Note 7) 0.5 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 50 pF iss V = 25V, V = 0V DS GS Output Capacitance C 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 5.0 pF rss Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10 s, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMN601VK January 2016 Diodes Incorporated www.diodes.com Document number: DS30655 Rev. 6 - 2