DMN62D0SFD-7 Diodes Incorporated

DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance Fast Switching Speed 540mA 2 VGS = 10V ESD Protected Gate to 2kV 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 430mA 3 VGS = 5V Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q- Description and Applications suffix) part. A listing can be found at DMN62D0SFD Marking Information Site 1: K62 = Product Type Marking Code K62 YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September) YM Date Code Key Year 2011 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code Y I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2: K62 = Product Type Marking Code YWX = Date Code Marking K62 Y = Year (ex:1 = 2021) W = Week (ex: a = Week 27 z Represents Week 52 and 53) YM YWX X = Internal Code (ex: U = Monday) Date Code Key Year 2011 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code 1 1 2 3 4 5 6 7 8 9 0 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 DMN62D0SFD March 2021 Diodes Incorporated www.diodes.com Document number: DS35473 Rev. 4 - 2 NEW PRODUCT