PHB45NQ15T,118 Nexperia

PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 02 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Simple gate drive required due to low thermal resistance gate charge Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications AC-to-DC secondary side rectification DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 150 V DS j j I drain current T =25C V =10V - - 45.1 A D mb GS see Figure 3 see Figure 1 Dynamic characteristics Q gate-drain charge V =10V I =25A - 10.3 - nC GD GS D V =75V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =20A - 3442m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10Nexperia PHB45NQ15T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHB45NQ15T D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) PHB45NQ15T 2 Product data sheet Rev. 02 2 February 2009 2 of 13 Nexperia B.V. 2017. All rights reserved