PHPT61006NYX Nexperia

PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 26 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 100 V CEO voltage I collector current - - 6 A C I peak collector current single pulse t 1 ms - - 12 A CM p R collector-emitter I = 6 A I = 600 mA t 300 s - 35 57 m CEsat C B p saturation resistance 0.02 T = 25 C pulsed ambNexperia PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter mb C 2 E emitter B 3 E emitter E 4 B base sym123 1 2 3 4 mb C collector LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61006NY LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT61006NY 1006NAB PHPT61006NY All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 January 2015 2 / 15