Product Information

PMPB55ENEAX

PMPB55ENEAX electronic component of Nexperia

Datasheet
MOSFET PMPB55ENEA/SOT1220/REEL 7" Q1/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3599 ea
Line Total: USD 0.36

5601 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
26190 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000

Stock Image

PMPB55ENEAX
Nexperia

3000 : USD 0.1491
9000 : USD 0.1461
24000 : USD 0.1461
45000 : USD 0.1461

4964 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

PMPB55ENEAX
Nexperia

1 : USD 0.1952
10 : USD 0.1932
25 : USD 0.1745
100 : USD 0.1709
250 : USD 0.1674
500 : USD 0.164
1000 : USD 0.164
3000 : USD 0.164

5601 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

PMPB55ENEAX
Nexperia

1 : USD 0.3599
10 : USD 0.3036
100 : USD 0.2277
500 : USD 0.1898
1000 : USD 0.1656
3000 : USD 0.1495
9000 : USD 0.1484
24000 : USD 0.1449
45000 : USD 0.1426

Read More Specifications

     
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Product Category
RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

PMPB55ENEA 60 V, N-channel Trench MOSFET 6 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 4 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 4 A T = 25 C - 42 56 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMPB55ENEA 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 3 G gate G 3 4 8 4 S source 5 D drain Transparent top view DFN2020MD-6 (SOT1220) 6 D drain S 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB55ENEA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB55ENEA 2G PMPB55ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 June 2016 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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