XR46000 N-Channel Power MOSFET Description FEATURES The XR46000 is a silicon N-channel enhanced power MOSFET. Fast switching With low conduction loss, good switching performance and high ESD improved capability Low gate charge (Typ. 7.5nC) avalanche energy, it is suitable for various power supply system, Low reverse transfer capacitance especially for AC step driving application for LED lighting. (Typ. 5.0pF) The package type is SOT-223, which comply with the RoHS standard. APPLICATIONS LED lighting applications Downlight Key Parameters High bay Specialty V 600V DSS Architectural I 1.5A D P (T = 25C) 20W D C R 7.0 DS,ON,typ Equivalent Circuit Pin Configuration Drain Drain 1 2 3 Gate Drain Source Gate SOT-223, Top View Source Figure 1. Equivalent Cirucit REV1B 1/6XR46000 Absolute Maximum Ratings Operating Conditions Stresses beyond the limits listed below may cause T operating junction temperature ............................. 150C J permanent damage to the device. Exposure to any Absolute T operating ambient temperature ................ -40C to 85C A Maximum Rating condition for extended periods may affect device reliability and lifetime. T = 25C unless otherwise noted. C V drain-to-source voltage ......................................600V DSS I continuous drain current (T = 25C) .......................1.5A D C I continuous drain current (T = 100C) ...................0.85A D C I pulsed drain current ..................................................6A DM V gate-to-source voltage .........................................30V GS P power dissipation (T = 25C) ................................20W D C P derating factor above 25C .............................0.16W/C D T storage temperature range ......... -65C to 150C STORAGE E single pulse avalanche energy .............................80mJ AS NOTE: Unless otherwise noted, all tests are pulsed tests at the specified temperature, therefore: T = T = T . J C A REV1B 2/6