Product Information

PMN50UPE,115

Name: PMN50UPE,115
Brand: Nexperia
SKU: PMN50UPE115_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PMN50UPE,115 electronic component of Nexperia

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Datasheet

MOSFET PMN50UPE/SC-74/REEL 7" Q1/T1 *

Manufacturer: Nexperia

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1097 ea
Line Total: USD 0.11

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 1 Multiples : 1 PMN50UPE,115 Nexperia	1 : USD 0.1097

0 - WHS 2 Ships to you between Thu. 16 May to Mon. 20 May MOQ : 1 Multiples : 1 PMN50UPE,115 Nexperia	1 : USD 1.3343 10 : USD 0.6097 100 : USD 0.2979 1000 : USD 0.2482 3000 : USD 0.2201 9000 : USD 0.2201 24000 : USD 0.2121 45000 : USD 0.2087 99000 : USD 0.2042

0 - WHS 3 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 84 Multiples : 1 PMN50UPE,115 Nexperia	84 : USD 0.1097

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMN50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage 1.3 Applications Relay driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3.6 A T = 25 C - 50 66 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current - 4 A - 4 A
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V
Rds On - Drain-Source Resistance 50 mOhms 50 mOhms
Transistor Polarity P - Channel P - Channel
Vgs th - Gate-Source Threshold Voltage - 0.6 V - 0.6 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 5 W 5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TSOP - 6 TSOP - 6
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Qg - Gate Charge 10.5 nC 10.5 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Brand Nexperia Nexperia
Fall Time 8800 ns 8800 ns
Rise Time 700 ns 700 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 2180 ns 2180 ns
Transistor Type 1 P - Channel 1 P - Channel
Cnhts 8541210000 8541210000
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000
Typical Turn-On Delay Time 400 ns 400 ns