PMEG045T100EPE 45 V, 10 A low VF Trench MEGA Schottky barrier rectifier 24 June 2020 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 10 A F(AV) Reverse voltage: V 45 V R Extremely low forward voltage High power capability due to clip-bonding technology and heat sink Small and thin SMD power plastic package, typical height 0.95 mm AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage T = 25 C - - 45 V R j I average forward = 0.5 f = 20 kHz T 142 C - - 10 A F(AV) sp current V forward voltage I = 10 A T = 25 C pulsed 1 - 480 545 mV F F j I reverse current V = 10 V T = 25 C pulsed 1 - 11 41 A R R j V = 45 V T = 25 C pulsed 1 - 22 80 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG045T100EPE 45 V, 10 A low VF Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A 1 K A 2 A anode 3 aaa-009063 3 K cathode 2 CFP15B (SOT1289B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG045T100EPE CFP15B plastic, thermal enhanced ultra thin SMD package 3 leads 2.13 SOT1289B mm pitch 5.8 x 4.3 x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG045T100EPE 045T M10E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 45 V R j I forward current = 1 T 137 C - 14 A F sp I average forward current = 0.5 f = 20 kHz T 142 C - 10 A F(AV) sp I non-repetitive peak t = 8 ms square wave T = 25 C - 130 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG045T100EPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 24 June 2020 2 / 11