PMEG060T060CLPE 60 V, 2 x 3 A dual common cathode low leakage current Trench MEGA Schottky barrier rectifier 27 April 2020 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) dual Schottky barrier rectifier in common cathode configuration encapsulated in a CFP15B (SOT1289B) power and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Reverse voltage: V 60 V R Forward current: I 3 A (per diode) F Low forward voltage Low leakage current due to Trench MEGA Schottky technology Power and flat lead SMD plastic package Package height typical 0.95 mm High power capability due to clip-bond technology AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications Freewheeling applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode (unless otherwise specified) I average forward = 0.5 square wave f = 20 kHz T - - 3 A F(AV) sp current 165 C V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 3 A T = 25 C 1 - 550 620 mV F F j I reverse current V = 10 V T = 25 C 1 - 0.14 0.9 A R R j V = 60 V T = 25 C 1 - 0.3 1.8 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG060T060CLPE 60 V, 2 x 3 A dual common cathode low leakage current Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode (diode 1) CC 1 2 A2 anode (diode 2) 3 3 CC common cathode 2 CFP15B (SOT1289B) A1 A2 006aab034 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG060T060CLPE CFP15B plastic, thermal enhanced ultra thin SMD package 3 leads 2.13 SOT1289B mm pitch 5.8 x 4.3 x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG060T060CLPE 060T L06C 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC60134) Symbol Parameter Conditions Min Max Unit Per diode (unless otherwise specified) V reverse voltage T = 25 C - 60 V R j I forward current = 1 T 162 C - 4.2 A F sp I average forward current = 0.5 square wave f = 20 kHz T - 3 A F(AV) sp 165 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 80 A FSM p j(init) forward current t = 8.3 ms half sine wave per device - 150 A p T = 25 C j(init) Per device, one diode loaded P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG060T060CLPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 27 April 2020 2 / 13