PMEG100T10ELR-Q 100 V, 1 A low leakage current Trench MEGA Schottky barrier rectifier 12 July 2021 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low Q and low I rr RM Low leakage current High power capability due to clip-bonding technology Small and flat lead SMD power plastic package Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications High efficiency DC-to-DC conversion Automotive LED lighting Switch mode power supply Freewheeling applications Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 1 A F(AV) sp current 166 C V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 1 A pulsed T = 25 C 1 - 670 750 mV F F j I reverse current V = 100 V pulsed T = 25 C 1 - 0.1 0.9 A R R j V = 100 V pulsed T = 125 C 1 - 0.18 1 mA R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG100T10ELR-Q 100 V, 1 A low leakage current Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 K A 1 2 2 A anode sym001 CFP3 (SOD123W) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG100T10ELR-Q CFP3 plastic, surface mounted package 2 terminals 2.6 mm x SOD123W 1.7 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code LA PMEG100T10ELR-Q 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 100 V R j I forward current = 1 T 163 C - 1.4 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 1 A F(AV) sp 166 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 40 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 0.68 W tot amb 2 - 1.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG100T10ELR-Q All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 12 July 2021 2 / 14