PMEG4030EP.115 Nexperia

PMEG4030EP 3 A low V MEGA Schottky barrier rectier F Rev. 01 7 August 2009 Product data sheet 1. Product prole 1.1 General description Planar Maximum Efciency General Application (MEGA) Schottky barrier rectier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and at lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n Average forward current: I 3A F(AV) n Reverse voltage: V 40 V R n Low forward voltage n High power capability due to clip-bond technology n AEC-Q101 qualied n Small and at lead SMD plastic package 1.3 Applications n Low voltage rectication n High efciency DC-to-DC conversion n Switch Mode Power Supply (SMPS) n Reverse polarity protection n Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. j Symbol Parameter Conditions Min Typ Max Unit I average forward current square wave F(AV) = 0.5 f=20kHz 1 T 65 C --3 A amb T 140 C --3 A sp V reverse voltage - - 40 V R V forward voltage I = 3 A - 430 490 mV F F I reverse current V = 40 V - 35 200 A R R 1 Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3PMEG4030EP NXP Semiconductors 3 A low V MEGA Schottky barrier rectier F 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 1 cathode 12 2 anode 12 sym001 1 The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG4030EP - plastic surface-mounted package 2 leads SOD128 4. Marking Table 4. Marking codes Type number Marking code PMEG4030EP AE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T =25 C - 40 V R j I average forward current square wave F(AV) = 0.5 f=20kHz 1 T 65 C -3 A amb T 140 C- 3 A sp 2 I non-repetitive peak square wave -50 A FSM forward current t =8ms p 3 4 P total power dissipation T 25 C - 625 mW tot amb 3 5 - 1050 mW 3 1 - 2100 mW PMEG4030EP 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 7 August 2009 2 of 13