Product Information

PMEG4030EP.115

PMEG4030EP.115 electronic component of Nexperia

Datasheet
Schottky Barrier Diodes (SBD) SOD-128 RoHS

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2031 ea
Line Total: USD 0.2

372 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
372 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

PMEG4030EP.115
Nexperia

1 : USD 0.2031
10 : USD 0.1856
100 : USD 0.1642
500 : USD 0.1609
1000 : USD 0.1609
3000 : USD 0.1609

3375 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

PMEG4030EP.115
Nexperia

5 : USD 0.3328
25 : USD 0.2951
70 : USD 0.2379
190 : USD 0.2249
3000 : USD 0.2184

     
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Semiconductor Structure
Type Of Diode
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
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PMEG4030EP 3 A low V MEGA Schottky barrier rectier F Rev. 01 7 August 2009 Product data sheet 1. Product prole 1.1 General description Planar Maximum Efciency General Application (MEGA) Schottky barrier rectier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and at lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n Average forward current: I 3A F(AV) n Reverse voltage: V 40 V R n Low forward voltage n High power capability due to clip-bond technology n AEC-Q101 qualied n Small and at lead SMD plastic package 1.3 Applications n Low voltage rectication n High efciency DC-to-DC conversion n Switch Mode Power Supply (SMPS) n Reverse polarity protection n Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. j Symbol Parameter Conditions Min Typ Max Unit I average forward current square wave F(AV) = 0.5 f=20kHz 1 T 65 C --3 A amb T 140 C --3 A sp V reverse voltage - - 40 V R V forward voltage I = 3 A - 430 490 mV F F I reverse current V = 40 V - 35 200 A R R 1 Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3PMEG4030EP NXP Semiconductors 3 A low V MEGA Schottky barrier rectier F 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 1 cathode 12 2 anode 12 sym001 1 The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG4030EP - plastic surface-mounted package 2 leads SOD128 4. Marking Table 4. Marking codes Type number Marking code PMEG4030EP AE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T =25 C - 40 V R j I average forward current square wave F(AV) = 0.5 f=20kHz 1 T 65 C -3 A amb T 140 C- 3 A sp 2 I non-repetitive peak square wave -50 A FSM forward current t =8ms p 3 4 P total power dissipation T 25 C - 625 mW tot amb 3 5 - 1050 mW 3 1 - 2100 mW PMEG4030EP 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 7 August 2009 2 of 13

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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