PMFPB8032XP

PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low V Maximum Efficiency General Application (MEGA) F Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits 1.8 V R rated for low-voltage gate drive DSon Small and leadless ultra thin SMD plastic package: 2 2 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low V MEGA Schottky diode F 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.7 A D GS amb Schottky diode I forward current T 105 C - - 2 A F sp V reverse voltage T = 25 C - - 20 V R amb MOSFET transistor static characteristics R drain-source on-state V = -4.5 V I = -2.7 A T = 25 C - 80 102 m DSon GS D j resistance Scan or click this QR code to view the latest information for this productNXP Semiconductors PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions Min Typ Max Unit Schottky diode V forward voltage I = 1 A T = 25 C - 320 365 mV F F j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol A G S 1 A anode 6 5 4 2 n.c. not connected 7 8 3 D drain 4 S source 1 2 3 5 G gate Transparent top view K D 6 K cathode DFN2020-6 (SOT1118) aaa-003667 7 K cathode 8 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMFPB8032XP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PMFPB8032XP 1X 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit MOSFET transistor V drain-source voltage T = 25 C - -20 V DS j PMFPB8032XP All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 21 December 2012 2 / 16