X-On Electronics has gained recognition as a prominent supplier of IRFB5620PBF mosfet across the USA, India, Europe, Australia, and various other global locations. IRFB5620PBF mosfet are a product manufactured by Infineon. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

IRFB5620PBF

IRFB5620PBF electronic component of Infineon
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See Product Specifications
Part No.IRFB5620PBF
Manufacturer: Infineon
Category:MOSFET
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Datasheet: IRFB5620PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2364 ea
Line Total: USD 2.24

Availability - 97
Ships to you between
Fri. 07 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
836 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 4.0628
10 : USD 3.2532
100 : USD 2.3913
500 : USD 2.08
1000 : USD 1.7875

3365 - WHS 2


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 2.6795
10 : USD 2.1045
100 : USD 1.8055
250 : USD 1.794
500 : USD 1.5755
1000 : USD 1.4375
2000 : USD 1.3915
5000 : USD 1.3685

58 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 3.263
9 : USD 2.015
23 : USD 1.911
500 : USD 1.872

97 - WHS 4


Ships to you between
Fri. 07 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 2.2364
10 : USD 1.9124
50 : USD 1.7088
100 : USD 1.5015
500 : USD 1.4086
1000 : USD 1.3671

960 - WHS 5


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 16
Multiples : 1
16 : USD 2.5675
50 : USD 2.145
100 : USD 2.0312
200 : USD 2.015
500 : USD 1.8362

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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IRFB5620PbF Features Key Parameters Key Parameters Optimized for Class-D Audio V 200 V DS Amplifier Applications m R typ. 10V 60 DS(ON) Low R for Improved Efficiency Q typ. DSON 25 nC g Low Q and Q for Better THD and Improved Q typ. 9.8 nC G SW sw R typ. 2.6 Efficiency G(int) T max 175 C J Low Q for Better THD and Lower EMI RR 175C Operating Junction Temperature for D D Ruggedness Can Deliver up to 300W per Channel into 8 Load in Half-Bridge Configuration Amplifier G S D G S TO-220AB GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 200 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 25 D C GS I T = 100C Continuous Drain Current, V 10V 18 A D C GS Pulsed Drain Current I 100 DM Power Dissipation P T = 25C 144 D C W Power Dissipation P T = 100C 72 D C Linear Derating Factor 0.96 W/C T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.045 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA Notes through are on page 2 www.irf.com 1 09/05/08 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.22 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 60 72.5 V = 10V, I = 15A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -14 mV/C GS(th) J I Drain-to-Source Leakage Current 20 V = 200V, V = 0V DSS DS GS A 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS g Forward Transconductance 37 S V = 50V, I = 15A fs DS D Q Total Gate Charge 25 38 g Q Pre-Vth Gate-to-Source Charge 6.3 V = 100V gs1 DS Q Post-Vth Gate-to-Source Charge 1.9 V = 10V gs2 GS nC Q Gate-to-Drain Charge 7.9 I = 15A gd D Q Gate Charge Overdrive 9.3 See Fig. 6 and 19 godr Q Switch Charge (Q + Q ) 9.8 sw gs2 gd R Internal Gate Resistance 2.6 5.0 G(int) t Turn-On Delay Time 8.6 V = 100V, V = 10V d(on) DD GS t Rise Time 14.6 I = 15A r D ns t Turn-Off Delay Time 17.1 R = 2.4 d(off) G t Fall Time 9.9 f C Input Capacitance 1710 V = 0V iss GS C Output Capacitance 125 V = 50V oss DS pF C Reverse Transfer Capacitance 30 = 1.0MHz, See Fig.5 rss C Effective Output Capacitance 138 V = 0V, V = 0V to 160V oss GS DS L Internal Drain Inductance Between lead, D D 4.5 6mm (0.25in.) nH G L Internal Source Inductance from package S 7.5 S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 113 mJ AS Avalanche Current I See Fig. 14, 15, 17a, 17b A AR Repetitive Avalanche Energy E mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C Continuous Source Current MOSFET symbol S C 25 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 15A, V = 0V SD J S GS t Reverse Recovery Time 98 147 ns T = 25C, I = 15A , V = 160V rr J F R Q Reverse Recovery Charge 491 737 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. R is measured at T of approximately 90C. J Starting T = 25C, L = 1.00mH, R = 25, I = 15A. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive J G AS Pulse width 400s duty cycle 2%. avalanche information 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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