Product Information

PMZ130UNEYL

Hot PMZ130UNEYL electronic component of Nexperia

Datasheet
N-Channel 20 V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

136: USD 0.0589 ea
Line Total: USD 8.01

6889 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 136  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5834 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

PMZ130UNEYL
Nexperia

5 : USD 0.1003
50 : USD 0.0879
150 : USD 0.0815
500 : USD 0.0769
2500 : USD 0.0706
5000 : USD 0.0687

51116 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMZ130UNEYL
Nexperia

1 : USD 0.3599
10 : USD 0.2219
100 : USD 0.107
1000 : USD 0.0759
10000 : USD 0.0725
20000 : USD 0.069

15141 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 910
Multiples : 1

Stock Image

PMZ130UNEYL
Nexperia

910 : USD 0.0987
1000 : USD 0.0963
2500 : USD 0.0944

19400 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 10000
Multiples : 10000

Stock Image

PMZ130UNEYL
Nexperia

10000 : USD 0.0714

6889 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 136
Multiples : 1

Stock Image

PMZ130UNEYL
Nexperia

136 : USD 0.0589
250 : USD 0.0577

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PMZ130UNE 20 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 0.6 0.48 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 1.8 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 1.8 A T = 25 C - 120 150 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMZ130UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ130UNE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ130UNE ZU PMZ130UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 March 2015 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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