Product Information

PMZ200UNEYL

PMZ200UNEYL electronic component of Nexperia

Datasheet
N-Channel 30 V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0547 ea
Line Total: USD 547

58200 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
58200 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 10000
Multiples : 10000

Stock Image

PMZ200UNEYL
Nexperia

10000 : USD 0.0547
20000 : USD 0.0537
40000 : USD 0.0529
60000 : USD 0.0519
80000 : USD 0.051

12314 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMZ200UNEYL
Nexperia

1 : USD 0.4278
10 : USD 0.2921
100 : USD 0.1265
1000 : USD 0.0851
2500 : USD 0.0805
10000 : USD 0.0701
20000 : USD 0.0644
50000 : USD 0.0598

     
Manufacturer
Product Category
RoHS - XON
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Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 0.6 0.48 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 1.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 1.4 A T = 25 C - 210 250 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMZ200UNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ200UNE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ200UNE ZV PMZ200UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 March 2015 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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