Product Information

PMZ290UNEYL

PMZ290UNEYL electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 20V N-channel Trench MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000

Stock Image

PMZ290UNEYL
Nexperia

10000 : USD 0.0464
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

PMZ290UNEYL
Nexperia

1 : USD 0.3594
N/A

Obsolete
0 - WHS 3

MOQ : 10000
Multiples : 10000

Stock Image

PMZ290UNEYL
Nexperia

10000 : USD 0.0526
20000 : USD 0.0513
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

PMZ290UNEYL
Nexperia

1 : USD 0.6576
10 : USD 0.5282
100 : USD 0.0997
1000 : USD 0.0507
2500 : USD 0.0415
10000 : USD 0.0341
N/A

Obsolete
0 - WHS 5

MOQ : 110
Multiples : 1

Stock Image

PMZ290UNEYL
Nexperia

110 : USD 0.057
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD plastic package: 1.0 0.6 0.48 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 1 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia PMZ290UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ290UNE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ290UNE ZS PMZ290UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 May 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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