PSMN009-100B,118

PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 July 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications High frequency computer motherboard OR-ing applicationss DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 230 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =75A -44 -nC GD GS D V =80V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -7.5 8.8 m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10Nexperia PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN009-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) Nexperia B.V. 2017. All rights reserved PSMN009-100B 2 Product data sheet Rev. 02 6 July 2009 2 of 13