Product Information

PSMN013-100BS

PSMN013-100BS electronic component of NXP

Datasheet
MOSFET, N CH, 100V, 68A, D2PAK

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2776 ea
Line Total: USD 1.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 1.2776
10 : USD 1.2096
25 : USD 0.9601
100 : USD 0.8543
250 : USD 0.824
500 : USD 0.7938

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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PSMN013-100BS N-channel 100V 13.9m standard level MOSFET in D2PAK 21 February 2014 Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 2 1 - - 68 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 170 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - 19.4 25 m DSon GS D j resistance Fig. 12 Fig. 13 V = 10 V I = 15 A T = 25 C - 10.8 13.9 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 17 23.8 nC GD GS D DS Fig. 15 Fig. 14 Q total gate charge V = 10 V I = 25 A V = 50 V - 59 83 nC G(tot) GS D DS Fig. 14 Fig. 15 Scan or click this QR code to view the latest information for this product D2PAKNXP Semiconductors PSMN013-100BS N-channel 100V 13.9m standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 68 A - - 127 mJ DS(AL)S GS j(init) D source avalanche V 100 V unclamped R = 50 sup GS energy 1 Continuous current is limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN013-100BS PSMN013-100BS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 100 V DGR j j GS PSMN013-100BS All information provided in this document is subject to legal disclaimers. NXP N.V. 2014. All rights reserved Product data sheet 21 February 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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