PSMN034-100PS,127 Nexperia

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V --32 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --86 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C --42 mJ DS(AL)S GS j(init) drain-source I =32 A V 100 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =15A -6.9 -nC GD GS D V = 50 V see Figure 12 DS Q total gate charge - 23.8 - nC G(tot) and 13 Static characteristics R drain-source V =10V I =15A --62 m DSon GS D on-state resistance T = 100 C see Figure 11 j V =10V I =15A - 29.3 34.5 m GS D T = 25 C see Figure 16 jPSMN034-100PS Nexperia N-channel 100 V 34.5 m standard level MOSFET in TO220. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN034-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB PSMN034-100PS 2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Objective data sheet Rev. 02 1 March 2010 2 of 15